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AP504
Product Features
* 1705 - 1790 MHz * 33 dB Gain * +25 dBm CDMA2k 7fa Power
(-63 dBc ACPR)
The Communications Edge TM Product Information
DCS-band 4W HBT Amplifier Module
Product Description
The AP504 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage amplifier module has 33 dB gain. The module has been internally optimized for linearity to provide +25 dBm (-63 dBc ACPR) linear power for 7-carrier CDMA2000 applications. The AP504 uses a high reliability InGaP/GaAs HBT process technology and does not require any external matching components. The module operates off of a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature. It has the added feature of a +5V power down control pin. While the module has been tuned for optimal performance for Class AB applications, the quiescent current can also be adjusted for Class B applications through an external resistor. A low-cost metal housing allows the device to have a low thermal resistance and achieves over 100 years MTTF. All devices are 100% RF and DC tested. The AP504 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations using the DCS1800 frequency band.
Functional Diagram
* +12 V Single Supply * Power Down Mode * Bias Current Adjustable * RoHS-compliant flange-mount pkg
1
2
3
4
5
6
Top View Pin No. 1 2/4 3/5 6 Case Function RF Output Vcc Vpd RF Input Ground
Applications
* Final stage amplifiers for Repeaters * Optimized for driver amplifier PA mobile infrastructure
Specifications (1)
25 C, Vcc=12V, Vpd=5V, Icq=835mA, R7=0, 50 unmatched fixture
Parameter
Operational Bandwidth Test Frequency Adjacent Channel Power Ratio Power Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Operating Current (2) Quiescent Current, Icq (2) Device Voltage, Vcc Device Voltage, Vpd Load Stability
Units
MHz MHz dBc dB dB dB dBm dBm mA mA V V VSWR
Min
Typ
Max
-61 35.5
Test Conditions
CDMA2000 7fa 25 dBm Total Power, 885 kHz offset Pout = +25 dBm
1705 - 1790 1765 -63.2 30.5 33 11 5 +36 +52 790 850 780 835 +12 +5 10:1
940 920
Pout = +23 dBm/tone, f = 1 MHz Pout = +25 dBm
Pull-down voltage: 0V = "OFF", 5V="ON"
1. Test conditions unless otherwise noted: 25C. 2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature RF Input Power (continuous)
with output terminated in 50
-40 to +85 C -55 to +150 C +15 dBm
Rating
Ordering Information
Part No.
AP504 AP504-PCB
Description
DCS-band 4W HBT Amplifier Module Fully-Assembled Evaluation Board
(Class AB configuration, Icq=835mA)
Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 1 of 5 February 2006
AP504
The Communications Edge TM Product Information
DCS-band 4W HBT Amplifier Module
Performance Graphs - Class AB Configuration (AP504-PCB)
The AP504-PCB and AP504 module is configured for Class AB by default. The resistor - R7 - which sets the current draw for the amplifier is set at 0 in this configuration. Increasing that value will decrease the quiescent and operating current of the amplifier module, as described on the next page.
+12V GND +12V 10F DNP +5V
DNP
0
0
DNP
100pF
.01F
DNP RF IN 0 DNP DNP 6
.01F
DNP
100pF RF OUT 0 Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. Details of the mounting holes used in the WJ heatsink are given on the last page of this datasheet. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing should be followed: 1. Connect RF In and Out 2. Connect the voltages and ground pins as shown in the circuit. 3. Apply the RF signal 4. Power down with the reverse sequence
5
4
3
2
1
DNP
DNP
Gain
+25 C, 12Vcc, Icq=850mA
Return Loss
+25 C, Vcc=12V, Icq=850mA
Gain vs. Temp
35
M a g n itu d e (d B )
0 -5
36 34 G a in (d B ) 32 30 28
1765 MHz, Vcc=12V, Icq=850mA
34 G a in (d B ) 33 32 31 30 1700
-10 -15 -20 -25 1700
S11
1720 1740 1760 1780
S22
26
1800
1720
1740
1760
1780
1800
-40
-20
0
20
40
60
80
Frequency (MHz) ACPR vs. Output Power vs. Temp
CDMA2000 SR1, 7FA , fc=1765 MHz, f=885 kHz, Vcc=12V, Icq=850mA
Frequency (MHz)
Temperature (C)
ACPR vs. Frequency vs. Temp
CDMA2000 SR1, 7FA , f=885 kHz, 25 dBm Pout, Vcc=12V, Icq=850mA
ACPR vs. Output Power vs. Temp
-50 -55 -60 -65 -70
A C P R (d B c )
A C P R (d B c )
-60 -65 -70
A C P R (d B c )
-40 C +25 C +85 C
-50 -55
CDMA2000 SR1, 7FA , fc=1765 MHz, f=1.98 MHz, Vcc=12V, Icq=850mA
-40 C +25 C +85 C
-50 -55 -60 -65
-40 C +25 C +85 C
18
20
22
24
26
28
18
20
22
24
26
28
-70 1750
1760
1770
1780
Total Output Power (dBm)
Total Output Power (dBm)
Frequency (MHz)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 5 February 2006
AP504
-60
The Communications Edge TM Product Information
DCS-band 4W HBT Amplifier Module
Performance Graphs (cont'd)
ACPR vs. Output Power
CDMA2000 SR1, 1FA , fc=1765 MHz, +25 C, Vcc=12V, Icq=850mA
Icc vs. Output Power
Icc / PAE vs. Output Power 1 Ic c (m A ) / P A E 0.8 PAE 0.6 0.4 0.2 0 Icc
1765 MHz, +25 C, Vcc=12V, Icq=850mA
1.98 MHz offset 885 kHz offset
860 840 Ic c (m A ) 820 800 780
1765 MHz, Vcc=12V, Icq=850mA
A C P R (d B c )
-70
-80
-40 C
+25 C
+85 C
-90 18 20 22 24 26 Total Output Power (dBm)
Output Power / Gain vs. Input Power 38 G a in (d B ) / P o u t (d B m ) 36 34 32 30 28 -6 -4 -2 0 2 4 Input Power (dBm)
1765 MHz, +25 C, Vcc=12V, Icq=850mA
760 18 20 22 24 26 28 Output Channel Power (dBm)
IMD vs. Output Power per tone
1765 MHz, +25 C, Vcc=12V, Icq=850mA
20
22
24
26
28
30
32
34
Output Power (dBm) OIP3 vs. Output Power per tone
1765 MHz, +25 C, Vcc=12V, Icq=850mA
-30 -40 IM D (d B ) -50 -60 -70 -80 18
55 50 O IP 3 (d B m ) 45 40 35 30
Pout Gain
IMD3_Upper IMD3_Lower IMD5
20
22
24
26
28
18
20
22
24
26
28
Output Power per tone (dBm)
Output Power per tone (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 5 February 2006
AP504
The Communications Edge TM Product Information
DCS-band 4W HBT Amplifier Module
MTTF Calculation
The MTTF of the AP504 can be calculated by first determining how much power is being dissipated by the amplifier module. Because the device's intended application is to be a power amplifier pre-driver or final stage output amplifier, the output RF power of the amplifier will help lower the overall power dissipation. In addition, the amplifier can be biased with different quiescent currents, so the calculation of the MTTF is custom to each application. The power dissipation of the device can be calculated with the following equation: Pdiss = Vcc * Icc - (Output RF Power - Input RF Power), Vcc = Operating supply voltage = 12V Icc = Operating current {The RF power is converted to Watts} While the maximum recommended case temperature on the datasheet is listed at 85 C, it is suggested that customers maintain an MTTF above 1 million hours. This would convert to a derating curve for maximum case temperature vs. power dissipation as shown in the plot below.
Maximum Recommended Case Temperature vs. Power Dissipation to maintain 1 million hours MTTF
90 Maximum Case Temperature (C)
To calculate the MTTF for the module, the junction temperature needs to be determined. This can be easily calculated with the module's power dissipation, the thermal resistance value, and the case temperature of operation: Tj = Pdiss * Rth + Tcase Tj = Junction temperature Pdiss = Power dissipation (calculated from above) Rth = Thermal resistance = 9 C/W Tcase = Case temperature of module's heat sink From a numerical standpoint, the MTTF can be calculated using the Arrhenius equation:
MTTF = A* e(Ea/k/Tj) A = Pre-exponential Factor = 6.087 x 10-11 hours Ea = Activation Energy = 1.39 eV k = Boltzmann's Constant = 8.617 x 10-5 eV/ K Tj = Junction Temperature (K) = Tj (C) + 273
A graphical view of the MTTF can be shown in the plot below.
MTTF vs. Junction Temperature 1.E+07
MTTF (hours)
80
1.E+06
70
60
50 4 5 6 7 8 9 10 11 12 Power Dissipation (Watts)
1.E+05 130
140
150
160
170
180
Junction Temperature (C)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 5 February 2006
AP504
The Communications Edge TM Product Information
DCS-band 4W HBT Amplifier Module
Outline Drawing
AP504
1 2 3 4 5 6
Outline Drawing for the Heatsink with the WJ Evaluation Board
Product Marking
The device will be marked with an "AP504" designator with an alphanumeric lot code on the top surface of the package noted as "ABCD" on the drawing. A manufacturing date will also be printed as "XXYY", where the "XX" represents the week number from 1 - 52. The product will be shipped in tubes in multiples of 15.
ESD / MSL Information
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard:
Class 1C Passes at 1,000 to < 2,000 volts Human Body Model (HBM) JEDEC Standard JESD22-A114 Class III Passes 500 to < 1,000 volts Charged Device Model (CDM) JEDEC Standard JESD22-C101
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 5 February 2006

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